Magnetic magnetic separator

PTMS magnetic separation

what is magnetic separation in chemistry？

The similarities between silicon carbide and gallium nitride Both silicon carbide and gallium nitride are wide-bandgap semiconductor materials, which have the characteristics of large forbidden band width, high electron drift saturation speed, small dielectric constant and good electrical conductivity. With the market demand for miniaturization and thermal conductivity of semiconductor devices, the market demand for such materials has skyrocketed, making it suitable for the fabrication of electronic devices that are resistant to radiation, high frequency, high power and high density. Advantages and Disadvantages of Silicon Carbide and Gallium Nitride Silicon carbide, also known as silicon carbide, is made by high-temperature smelting of quartz sand, petroleum coke, wood chips and other raw materials through an electric resistance furnace. Silicon carbide is also a rare mineral in the nature - Moissanite. Among the non-oxide high-tech refractory raw materials such as C, N and B, silicon carbide is the most widely used and economical one. At present, China's industrial production of silicon carbide is divided into black silicon carbide and green silicon carbide, both of which are hexagonal crystals. Gallium nitride is a compound of nitrogen and gallium. It is a direct energy gap semiconductor. The structure of the compound is similar to wurtzite and has a high hardness. Gallium nitride has a wide energy gap of 3.4 eV, which can be used in high-power, high-speed optoelectronic components. For example, gallium nitride can be used in violet laser diodes, without the use of nonlinear semiconductor-pumped solid-state lasers. Under the conditions, a violet laser is generated.