magnetic separation diagram

PTMS MAGNETIC SEPARATOR

what is magnetic separation method？

Silicon carbide is currently the most mature wide-bandgap semiconductor material. Countries around the world attach great importance to the research of silicon carbide. The United States, Europe and Japan have not only developed corresponding research plans at the national level. Silicon carbide is an important abrasive because of its high hardness, but its application range is beyond that of ordinary abrasives. For example, it has high temperature resistance and thermal conductivity and is one of the preferred kiln materials for tunnel kiln or shuttle kiln. Its electrical conductivity makes it an important electric heating element. In addition, silicon carbide materials can also be used in functional ceramics, refractory materials, metallurgical raw materials and other applications. The development problem of silicon carbide devices is not a design problem, but a fabrication process of chip structures, such as micropipe defect density of silicon carbide wafers, low efficiency of epitaxial process, special requirements of doping process, and temperature resistance of supporting materials. Another problem in the production of silicon carbide is environmental protection. Since silicon carbide generates harmful gases such as carbon monoxide and sulfur dioxide during the smelting process, the dust particles are seriously polluted if they are not handled properly. Gallium nitride is a new semiconductor material for the development of microelectronic devices and optoelectronic devices. It has broad prospects in applications of optoelectronics, lasers, high temperature and high power devices and high frequency microwave devices. There are three problems in the development of gallium nitride materials. One is how to obtain high-quality, large-sized GaN seed crystals, because it takes several years to directly grow a two-inch seed crystal by ammonia heating; the second is for gallium nitride materials. For a long time, since the substrate single crystal is not solved, the heteroepitaxial defect density is quite high, because the gallium nitride is too polar, it is difficult to obtain a good metal-semiconductor ohmic contact by high doping, and the process manufacturing is complicated; The GaN industrial chain has not yet fully formed.